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Electronics I · Digital lecture note

Recitation: BJT and MOSFET circuit analysis

Elektronik I – Uygulama dersi: BJT ve MOSFET devre analizi

Course
Electronics I
Semester
Semester 4 · Spring 2022–23
Format
PDF · 15 pages · 0.5 MB · handwriting-style LaTeX
Language
Turkish
Original note
Elektronik1-Uygulama-dersi.pdf

Open the PDF (0.5 MB)LaTeX source (.tex)Original handwritten note

Recitation: BJT and MOSFET circuit analysis – first page of the digital lecture note
Notice: The digital notes were created from the handwritten notes with the help of Claude (Anthropic); they are meant as a supplementary resource and may contain errors. Always rely on the original notes and the official course materials.

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Analyze the circuit at left. Assume β = 100 , V_A = 100 . Calculate the voltage gain (v_outv_in) , R_in , and R_out

Determine the type of amplifier

Common-Emitter (Use π model)

DC analysis (to find small signal param )

(ok: v_π ifadesi V_out denkleminin sonundaki v_π 'ye yerleştiriliyor)

Common emitter de sadece farkı var!

Design the circuit given below to obtain a current of 80 . Find the value of R_D and V_D . Let the NMOS have V_T = 0,6 , . Neglect channel length modulation.

(İlk iki satırda 12μ_n C_oxWL çarpanı çizilmiş; V_GS1 ve V_GS2 daire içine alınmış.)

Design the circuit to obtain a drain voltage of 0,1 . What is the effective resistance between drain and source at this point V_T = 1 and .

(İlk ifadenin altında dalgalı çizgi ve ``X'' işareti var.)

Perform DC analysis, calculate small signal params

Estimate the voltage gain [v_outv_sig] , R_in , R_out

Draw small signal equivalent circuit

Calculate gain, R_in , R_out

← Small Signal Models (review) – BJT small-signal models and amplifiersMOSFET small signal – small-signal model and amplifier configurations →

← All Electronics I digital notes