Electronic Devices · Digital lecture note

MOSFET: channel, i–v characteristic, operating regions (pp. 41–46)

Elektronik Elemanlar – MOSFET: kanal, i–v karakteristiği, çalışma bölgeleri (s. 41–46)

Course: Electronic Devices (ELM231)
Semester: Semester 3 · Fall 2022–23
Format: PDF · 8 pages · 1.4 MB · handwriting-style LaTeX
Language: Turkish
Original note: Elektronik-elemanlar-notlarim.pdf

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MOSFET: channel, i–v characteristic, operating regions (pp. 41–46) – first page of the digital lecture note

Notice: The digital notes were created from the handwritten notes with the help of Claude (Anthropic); they are meant as a supplementary resource and may contain errors. Always rely on the original notes and the official course materials.

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Section headings of the note (in Turkish):

Applying some v_DS
Table 5.1 (266)Table 5.1 (266)

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C_ox = Oxide capacitance of the device

Applying some v_DS

Deep triode Region

Not (sağ üstte, ok ile (1+λ v_DS) terimine işaret ediyor): ``Channel length modulation (kanal boyu modülasyonu)''Satırların sonu 43. sayfa fotoğrafında kesilmiş; devamı 44. sayfa fotoğrafının sol kenarında kısmen görülüyor.

b) needed to operate the transistor in the sat. region → I_D = 100 μA

c) (b) deki transistör için V_OV ve V_GS gerilimlerini hesaplayınız

c) Transistor in deep triode region

pmos + nmos → cmos → mos

V_GS < V_TH → no channel, transistor in cutoff

V_GS = V_TH + V_OV – a channel is induced → triode or saturation

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